Subharmonic Planar Doped Barrier Mixer Conversion Loss Characteristics

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Planar Doped Barrier Subharmonic Mixers

ThefPDB\(" Planar Doped B_arrier| diode is a device consisting of a p doping spike \v .' between two" intrinsic layers and n ohmic contacts. This device has the advantages of controllable barrier height, diode capacitance and forward to reverse current ratio. A symmetrically designed PDB has an anti-symmetric current vs. voltage characteristic and is ideal for use as millimeter wave subharmonic...

متن کامل

A high conversion-gain Q-band InP DHBT subharmonic mixer using LO frequency doubler

The paper presents analysis and design of a -band subharmonic mixer (SHM) with high conversion gain. The SHM consists of a local oscillator (LO) frequency doubler, RF pre-amplifier, and single-ended mixer. The SHM has been fabricated in a high-speed InP double heterojunction bipolar transistor (DHBT) technology using coplanar waveguide structures. To the best of our knowledge, this is the first...

متن کامل

Development of a 220-GHz Schottky Diode Subharmonic Mixer

In this paper, the design of a waveguide fixtuned 220GHz subharmonically pumped mixer using Schottky planar diodes is demonstrated. It is supposed to be applied in an experimental short-range and high-speed communication system. The anti-parallel pair of planar Schottky diodes from the Rutherford Appleton Laboratory (RAL) was flip-chip mounted and soldered onto a suspended 75μm-thick quartz mic...

متن کامل

420 GHz subharmonic mixer based on heterogeneous integrated Schottky diode

This paper describes 420GHz subharmonic mixer based on heterogeneous integrated schottky diode designed by University of Electronic Science and Technology of China (UESTC) and fabricated by China Electronics Technology Group Corporation-13 (CETC-13). The whole circuit including schottky diodes is integrated directly on the 50 μm quartz instead of the traditional 12 um GaAs substrate thus the ci...

متن کامل

Heterostructure Barrier Mixers for Terahertz Applications

This paper deals with Schottky and Heterostructure Barrier devices fabricated for planar integration in a 560 GHz Subharmonic Mixer (SHM). Taking advantage of an InP-based technology, two barrier types, metal/InGaAs and metal/InAlAs/InGaAs respectively, have been investigated. The design was carried out by means of self-consistent quantum calculations and the fabrication involved submicron Tsha...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques

سال: 1983

ISSN: 0018-9480

DOI: 10.1109/tmtt.1983.1131450